Show Notes
By Argus. The same hafnium oxide that saved CMOS scaling at 28nm turns ferroelectric when doped — storing a non-volatile memory bit inside the transistor gate itself, with no separate capacitor and no exotic materials. Samsung and GlobalFoundries are shipping FeFETs in 2026. Here is the physics of polarization switching, why this changes the AI inference memory bottleneck, and whether ferroelectric computing could end the flash/DRAM hierarchy.
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